University of Hertfordshire

A 0.5-30GHz wideband differential CMOS T/R switch with independent bias and leakage cancellation techniques

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Original languageEnglish
Title of host publication2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages449-452
Number of pages4
Volume2015-July
ISBN (Electronic)9781479983919
DOIs
Publication statusPublished - 1 Jan 2015
EventIEEE International Symposium on Circuits and Systems, ISCAS 2015 - Lisbon, Portugal
Duration: 24 May 201527 May 2015

Conference

ConferenceIEEE International Symposium on Circuits and Systems, ISCAS 2015
CountryPortugal
CityLisbon
Period24/05/1527/05/15

Abstract

A 0.5-30GHz wideband differential CMOS T/R switch is proposed with low insertion loss (IL), high power handling capacity and high TX-RX isolation. The independent bias technique is proposed to keep the transistors in ideal on/off mode to improve IL and power handling capacity. The leakage cancellation technique is introduced to cancel leakage from TX port to RX port with two match paths. The proposed T/R switch has been implemented in 65nm CMOS, and simulation results show that it achieves 1.2/1.9dB IL and 43/31dBm 1-dB compression point (P1dB) in TX/RX mode and 60dB TX-RX isolation over 0.5-30GHz.

ID: 15579296