University of Hertfordshire

Aging Benefits in Nanometer CMOS Designs

Research output: Contribution to journalArticle

Documents

  • Daniele Rossi
  • Vasileios Tenentes
  • Sheng Yang
  • Saqib Khursheed
  • Bashir M. Al-Hashimi
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Original languageEnglish
Pages (from-to)324-328
Number of pages5
JournalIEEE Transactions on Circuits and Systems II: Express Briefs
Volume64
Issue3
DOIs
Publication statusPublished - 2 May 2016

Abstract

n this brief, we show that bias temperature instability (BTI) aging of MOS transistors, together with its detrimental effect for circuit performance and lifetime, presents considerable benefits for static power consumption due to subthreshold leakage current reduction. Indeed, static power reduces considerably, making CMOS circuits more energy efficient over time. Static power reduction depends on transistor stress ratio and operating temperature. We propose a simulation flow allowing us to properly evaluate the BTI aging of complex circuits in order to estimate BTI-induced power reduction accurately. Through HSPICE simulations, we show 50% static power reduction after only one month of operation, which exceeds 78% in ten years. BTI aging benefits for power consumption are also proven with experimental measurements.

Notes

This document is the Accepted Manuscript version of the following article: Daniele Rossi, Vasileios Tenentes, Sheng Yang, Saqib Khursheed, and Bashir M. Al-Hashimi, ‘Aging Benefits in Nanometer CMOS Designs’, IEEE Transactions on Circuits and Systems II: Express Briefs, Vol. 64 (3), May 2016. © 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.

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