University of Hertfordshire

  • Thomas Defforge
  • L. Coudron
  • Gael Gautier
  • Sebastien Kouassi
  • Wilfried Vervisch
  • Francois Tran Van
  • Laurent Ventura
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Original languageEnglish
Pages (from-to)1815-1819
Number of pages5
Journalphysica status solidi (c)
Volume8
Issue6
DOIs
Publication statusPublished - 2011

Abstract

In this paper, the effect of low concentrated alkaline solutions etching on texturized silicon structures at low temperatures has been studied. The silicon samples have been previously etched either from regular arrays by HF anodization on prepatterned substrates or by Deep Reactive Ion Etching (DRIE). After immersion in a low concentrated potassium hydroxide (KOH) solution mixed with isopropyl alcohol (IPA), the quality of the silicon sidewalls has been improved by an anisotropic etching. Thus, the trenches wall surface has been smoothed and planed.

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