University of Hertfordshire

By the same authors

Memristor-based random access memory: The delayed switching effect could revolutionize memory design

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Documents

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Original languageEnglish
Title of host publication15th Non-Volatile Memory Technology Symposium (NVMTS), 2015
Place of PublicationBeijing, China
PublisherIEEE
Number of pages8
ISBN (Electronic)978-1-5090-2126-0
DOIs
StatePublished - 25 Apr 2016
Event Non-Volatile Memory Technology Symposium (NVMTS), 2015 15th - Beijing, China

Conference

Conference Non-Volatile Memory Technology Symposium (NVMTS), 2015 15th
Abbreviated titleNVMTS 2015
CountryChina
CityBeijing
Period12/10/1514/10/15
Internet address

Abstract

Memristor’s on/off resistance can naturally store binary bits for non-volatile memories. In this work, we found that memristor’s another peculiar feature that the switching takes place with a time delay (we name it “the delayed switching”) can be used to selectively address any desired memory cell in a crossbar array. The analysis shows this is a must-be in a memristor with a piecewise-linear φ-q curve. A “circuit model”-based experiment has verified the delayed switching feature. It is demonstrated that memristors can be packed at least twice as densely as semiconductors, achieving a significant breakthrough in storage density.

Notes

Frank Wang, Leon O. Chua, and Na Helian, 'Memristor-based random access memory: The delayed switching effect could revolutionize memory design' paper presented at the 15th Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China 12-14 October 2015

ID: 11108776