University of Hertfordshire


  • Xiaorun Zhou
  • Taiping Lu
  • Yadan Zhu
  • Guangzhou Zhao
  • Hailiang Dong
  • Zhigang Jia
  • Yongzhen Yang
  • Yong Chen
  • Bingshe Xu
View graph of relations
Original languageEnglish
Article number354
JournalNanoscale Research Letters
Journal publication date16 May 2017
Publication statusPublished - 16 May 2017


Surface morphology evolution mechanisms of InGaN/GaN multiple quantum wells (MQWs) during GaN barrier growth with different hydrogen (H2) percentages have been systematically studied. Ga surface-diffusion rate, stress relaxation, and H2 etching effect are found to be the main affecting factors of the surface evolution. As the percentage of H2 increases from 0 to 6.25%, Ga surface-diffusion rate and the etch effect are gradually enhanced, which is beneficial to obtaining a smooth surface with low pits density. As the H2 proportion further increases, stress relaxation and H2 over- etching effect begin to be the dominant factors, which degrade surface quality. Furthermore, the effects of surface evolution on the interface and optical properties of InGaN/GaN MQWs are also profoundly discussed. The comprehensive study on the surface evolution mechanisms herein provides both technical and theoretical support for the fabrication of high-quality InGaN/GaN heterostructures.


This is an Open Access article distributed under the terms of the Creative Commons Attribution 4.0 International License (, which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

ID: 12355600