Abstract
This paper presents a solid state power amplifier (PA) at 24 - 28 GHz in a 0.15-μm GaN on SiC technology. The PA adopts single-ended architecture containing power and a driver stages based on common source topology to get an output power and a gain greater than 32 dBm, and 20 dB, respectively. Harmonic balance(HB) simulations are performed to optimize the single-ended PA for wideband characteristics. Optimum stability and matching networks are introduced to meet the desired characteristics. The performance of the PA is experimentally characterized and a good co-relation between simulation and measurement is found. The PA shows a peak small-signal gain of 21.5 dB at 26 GHz. In terms of large-signal excitation, the PA delivers a maximum output power greater 32dBm at 26 GHz with peak PAE of at least 36%. The PA demonstrates high output power without power combining and it occupies an area of 4 mm2. The PA is suitable for various applications targeting frequency band of 24-28 GHz.
| Original language | English |
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| Title of host publication | IEEE International Symposium on Circuits and Systems (ISCAS) |
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| Publication status | Published - 25 May 2025 |
| Event | 2024 IEEE International Symposium on Circuits and Systems (ISCAS) - , Singapore Duration: 19 May 2024 → 22 May 2024 https://ieee-cas.org/event/conference/2024-ieee-international-symposium-circuits-and-systems |
Conference
| Conference | 2024 IEEE International Symposium on Circuits and Systems (ISCAS) |
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| Abbreviated title | ISCAS 2024 |
| Country/Territory | Singapore |
| Period | 19/05/24 → 22/05/24 |
| Internet address |
Keywords
- GaN, HB, PA, SiC