26 GHz Solid State Power Amplifier in a 0.15-μm GaN on SiC Technology

Abdul  Ali; Syed Mudassir Hussain; Yichuang Sun; Franco  Giannini; Paolo  Colantonio

doi:10.1109/ISCAS56072.2025.11044293

26 GHz Solid State Power Amplifier in a 0.15-μm GaN on SiC Technology

Abdul Ali
, Syed Mudassir Hussain
, Yichuang Sun
, Franco Giannini
, Paolo Colantonio

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper presents a solid state power amplifier (PA) at 24 - 28 GHz in a 0.15-μm GaN on SiC technology. The PA adopts single-ended architecture containing power and a driver stages based on common source topology to get an output power and a gain greater than 32 dBm, and 20 dB, respectively. Harmonic balance(HB) simulations are performed to optimize the single-ended PA for wideband characteristics. Optimum stability and matching networks are introduced to meet the desired characteristics. The performance of the PA is experimentally characterized and a good co-relation between simulation and measurement is found. The PA shows a peak small-signal gain of 21.5 dB at 26 GHz. In terms of large-signal excitation, the PA delivers a maximum output power greater 32dBm at 26 GHz with peak PAE of at least 36%. The PA demonstrates high output power without power combining and it occupies an area of 4 mm2. The PA is suitable for various applications targeting frequency band of 24-28 GHz.

Original language	English
Title of host publication	2025 IEEE International Symposium on Circuits and Systems (ISCAS), London, UK, 25-28 May 2025.
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
DOIs	https://doi.org/10.1109/ISCAS56072.2025.11044293
Publication status	Published - 27 Jun 2025

Keywords

GaN, HB, PA, SiC

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10.1109/ISCAS56072.2025.11044293Licence: Unspecified

Cite this

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title = "26 GHz Solid State Power Amplifier in a 0.15-μm GaN on SiC Technology",

abstract = "This paper presents a solid state power amplifier (PA) at 24 - 28 GHz in a 0.15-μm GaN on SiC technology. The PA adopts single-ended architecture containing power and a driver stages based on common source topology to get an output power and a gain greater than 32 dBm, and 20 dB, respectively. Harmonic balance(HB) simulations are performed to optimize the single-ended PA for wideband characteristics. Optimum stability and matching networks are introduced to meet the desired characteristics. The performance of the PA is experimentally characterized and a good co-relation between simulation and measurement is found. The PA shows a peak small-signal gain of 21.5 dB at 26 GHz. In terms of large-signal excitation, the PA delivers a maximum output power greater 32dBm at 26 GHz with peak PAE of at least 36\%. The PA demonstrates high output power without power combining and it occupies an area of 4 mm2. The PA is suitable for various applications targeting frequency band of 24-28 GHz. ",

keywords = "GaN, HB, PA, SiC",

author = "Abdul Ali and Hussain, \{Syed Mudassir\} and Yichuang Sun and Franco Giannini and Paolo Colantonio",

note = "{\textcopyright} 2025 IEEE. ",

year = "2025",

month = jun,

day = "27",

doi = "10.1109/ISCAS56072.2025.11044293",

language = "English",

booktitle = "2025 IEEE International Symposium on Circuits and Systems (ISCAS), London, UK, 25-28 May 2025.",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

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26 GHz Solid State Power Amplifier in a 0.15-μm GaN on SiC Technology. / Ali, Abdul ; Hussain, Syed Mudassir ; Sun, Yichuang et al.
2025 IEEE International Symposium on Circuits and Systems (ISCAS), London, UK, 25-28 May 2025.. Institute of Electrical and Electronics Engineers (IEEE), 2025.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - 26 GHz Solid State Power Amplifier in a 0.15-μm GaN on SiC Technology

AU - Ali, Abdul

AU - Hussain, Syed Mudassir

AU - Sun, Yichuang

AU - Giannini, Franco

AU - Colantonio, Paolo

PY - 2025/6/27

Y1 - 2025/6/27

N2 - This paper presents a solid state power amplifier (PA) at 24 - 28 GHz in a 0.15-μm GaN on SiC technology. The PA adopts single-ended architecture containing power and a driver stages based on common source topology to get an output power and a gain greater than 32 dBm, and 20 dB, respectively. Harmonic balance(HB) simulations are performed to optimize the single-ended PA for wideband characteristics. Optimum stability and matching networks are introduced to meet the desired characteristics. The performance of the PA is experimentally characterized and a good co-relation between simulation and measurement is found. The PA shows a peak small-signal gain of 21.5 dB at 26 GHz. In terms of large-signal excitation, the PA delivers a maximum output power greater 32dBm at 26 GHz with peak PAE of at least 36%. The PA demonstrates high output power without power combining and it occupies an area of 4 mm2. The PA is suitable for various applications targeting frequency band of 24-28 GHz.

AB - This paper presents a solid state power amplifier (PA) at 24 - 28 GHz in a 0.15-μm GaN on SiC technology. The PA adopts single-ended architecture containing power and a driver stages based on common source topology to get an output power and a gain greater than 32 dBm, and 20 dB, respectively. Harmonic balance(HB) simulations are performed to optimize the single-ended PA for wideband characteristics. Optimum stability and matching networks are introduced to meet the desired characteristics. The performance of the PA is experimentally characterized and a good co-relation between simulation and measurement is found. The PA shows a peak small-signal gain of 21.5 dB at 26 GHz. In terms of large-signal excitation, the PA delivers a maximum output power greater 32dBm at 26 GHz with peak PAE of at least 36%. The PA demonstrates high output power without power combining and it occupies an area of 4 mm2. The PA is suitable for various applications targeting frequency band of 24-28 GHz.

KW - GaN, HB, PA, SiC

U2 - 10.1109/ISCAS56072.2025.11044293

DO - 10.1109/ISCAS56072.2025.11044293

M3 - Conference contribution

BT - 2025 IEEE International Symposium on Circuits and Systems (ISCAS), London, UK, 25-28 May 2025.

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

26 GHz Solid State Power Amplifier in a 0.15-μm GaN on SiC Technology

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Keywords

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