A fully integrated cross-coupled charge pump circuit with four-clock signals and a new method of body bias have been proposed. The new clock scheme eliminates all of the reversion power loss and reduces the ripple voltage. In addition, the largest voltage differences between the terminals of all transistors do not exceed the supply voltage. We have also solved the gate-oxide overstress problem in the conventional charge pump circuits and enhanced the reliability. The proposed charge pump circuit has been simulated using Spectre and in the TSMC 0.18um CMOS process. The simulation results show that the maximum voltage conversion efficiency of the new 3-stage cross-coupled circuit with an input voltage of 1.5V is 99.8%. Moreover, the output ripple voltage has been significantly reduced.
|Published - 19 Sept 2017
|Oxford Circuits and Systems Conference, Oxford, September 2017 -
Duration: 19 Sept 2017 → …
|Oxford Circuits and Systems Conference, Oxford, September 2017
|19/09/17 → …