Abstract
The present paper deals with the realization of high conductivity through silicon via from macroporous silicon arrays. The pores were first etched by anodization into a hydrofluoric acid mixture. The high aspect ratio via were then filled by an optimized potentiostatic way involving a specific electrolyte with additives. The copper micro-wires were observed by SEM whereas XRD analysis enabled the determination of copper average grain size.
Original language | English |
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Title of host publication | Procs 2011 IEEE Int Interconnect Technology Conference and 2011 Materials for Advanced Metallization |
Subtitle of host publication | (IITC/MAM) |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 1-3 |
Number of pages | 3 |
ISBN (Print) | 978-1-4577-0502-1 |
DOIs | |
Publication status | Published - 2011 |
Event | IEEE International Interconnect Technology Conference and Materials for Advanced Metallization (IITC/MAM) - Dresden Duration: 8 May 2011 → 12 May 2011 |
Conference
Conference | IEEE International Interconnect Technology Conference and Materials for Advanced Metallization (IITC/MAM) |
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City | Dresden |
Period | 8/05/11 → 12/05/11 |