Abstract
The present paper deals with the realization of high conductivity through silicon via from macroporous silicon arrays. The pores were first etched by anodization into a hydrofluoric acid mixture. The high aspect ratio via were then filled by an optimized potentiostatic way involving a specific electrolyte with additives. The copper micro-wires were observed by SEM whereas XRD analysis enabled the determination of copper average grain size.
| Original language | English |
|---|---|
| Title of host publication | Procs 2011 IEEE Int Interconnect Technology Conference and 2011 Materials for Advanced Metallization |
| Subtitle of host publication | (IITC/MAM) |
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| Pages | 1-3 |
| Number of pages | 3 |
| ISBN (Print) | 978-1-4577-0502-1 |
| DOIs | |
| Publication status | Published - 2011 |
| Event | IEEE International Interconnect Technology Conference and Materials for Advanced Metallization (IITC/MAM) - Dresden Duration: 8 May 2011 → 12 May 2011 |
Conference
| Conference | IEEE International Interconnect Technology Conference and Materials for Advanced Metallization (IITC/MAM) |
|---|---|
| City | Dresden |
| Period | 8/05/11 → 12/05/11 |
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