Delayed switching in memristors and memristive systems

F. Wang; N. Helian; S. Wu; M-G. Lim; Y.K. Guo; M.A. Parker

doi:10.1109/LED.2010.2049560

Delayed switching in memristors and memristive systems

F. Wang, N. Helian, S. Wu, M-G. Lim, Y.K. Guo, M.A. Parker

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Abstract

It was found that the switching in a memristor takes place with a time delay (this peculiar feature is named “the delayed switching”). This feature has been verified by a circuit-based experiment. The physical interpretation of this phenomenon is that an electron element possesses certain inertia, i.e., charge $q$ or flux $varphi$ is inertial with the tendency to remain unchanged (settle to some equilibrium state). It cannot respond as rapidly as the fast variation in the excitation waveform and always takes a finite but small time interval to change its resistance value, as it must take place in a memristor or memristive system. In addition, a potential application of using this feature in ultradense computer memory has been discussed.

Original language	English
Pages (from-to)	755-757
Journal	IEEE Electron Device Letters
Volume	31
Issue number	7
DOIs	https://doi.org/10.1109/LED.2010.2049560
Publication status	Published - 2010

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AU - Parker, M.A.

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JO - IEEE Electron Device Letters

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Delayed switching in memristors and memristive systems

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