Design of Heterogeneous Memristor Based 1T2M Multi-value Memory Crossbar Array

Jingru Sun, Mengyuan Li, Kexin Kang , Shaopeng Zhu, Yichuang Sun

Research output: Contribution to journalArticlepeer-review


As a new type of electronic component, memristor has the characteristics of small size, fast reading and writing speed, non-volatile and easy to be compatible with CMOS circuits. It is one of the most promising technologies to realize non-volatile memory. However, the existing multi-value storage cross array has problems such as complex circuit structure, sneak path problem and low storage density, which affect the practicability of the multi-value storage cross array. In this paper, a multi-value memory crossbar array based on heterogeneous memristors is proposed, in which the memory cell is composed of one Transistor and two heterogeneous Memristors (1T2M) with different threshold voltages and R on resistance values. A single voltage signal completes the four-value read and write operation, which reduces the current path and simplifies the circuit structure. Simulation verification by PSpice shows that compared with existing work, the proposed 1T2M multi-value memory crossbar array has simpler circuit structure, higher storage density, faster reading and writing speed, and overcomes better the leakage current problem.
Original languageEnglish
Pages (from-to)1533-1540
Number of pages8
JournalJournal of Electronics & Information Technology (JEIT)
Issue number6
Early online date19 Apr 2021
Publication statusPublished - 18 Jun 2021


  • Crossbar array
  • Memory
  • Memristor
  • Sneak paths


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