As a new type of electronic component, memristor has the characteristics of small size, fast reading and writing speed, non-volatile and easy to be compatible with CMOS circuits. It is one of the most promising technologies to realize non-volatile memory. However, the existing multi-value storage cross array has problems such as complex circuit structure, sneak path problem and low storage density, which affect the practicability of the multi-value storage cross array. In this paper, a multi-value memory crossbar array based on heterogeneous memristors is proposed, in which the memory cell is composed of one Transistor and two heterogeneous Memristors (1T2M) with different threshold voltages and R on resistance values. A single voltage signal completes the four-value read and write operation, which reduces the current path and simplifies the circuit structure. Simulation verification by PSpice shows that compared with existing work, the proposed 1T2M multi-value memory crossbar array has simpler circuit structure, higher storage density, faster reading and writing speed, and overcomes better the leakage current problem.
|Number of pages||8|
|Journal||Journal of Electronics & Information Technology (JEIT)|
|Early online date||19 Apr 2021|
|Publication status||Published - 18 Jun 2021|
- Crossbar array
- Sneak paths