Design of ultra-wideband on-chip millimter-wave bandpass filter in 0.13-µm (Bi)-CMOS technology

In this work, an on-chip bandpass filter (BPF) with ultra-wideband, low insertion loss, sharp selectivity and excellent in-band flatness is achieved using a novel design approach based on a quasi-lumped-element method. This approach simply utilizes folded metal strip lines with metal-insulator-metal (MIM) capacitors. To understand the principle of the presented design approach, theoretical analysis is given by means of a simplified equivalent LC-circuit model. Using the analyzed results with a full-wave electromagnetic (EM) simulator to guide the design, a BPF is implemented and fabricated in a standard 0.13-µm (Bi)-CMOS technology. The measurements show that a return loss of better than 10 dB is obtained from 13.5 to 32 GHz. Furthermore, the insertion loss of less than 2.3 dB is achieved with less than 0.1 dB in-band magnitude ripple. The BPF size without measurement pads is only 0.148 mm2 (0.37 × 0.4 mm2).