Abstract
The small sizes of the MEMS or NEMS electromechanical resonators and their single wafer, multi frequencies possibilities has focused tremendous interest in the development of demonstrators using standard CMOS process. But sizes reduction induces output signal detection challenge. This paper deals with the dynamic characterization of NEMS. Heterodyne interferometric measurements are performed on beam and plate resonators obtained using the Silicon on Nothing (SoN) process. We obtained respectively 6.6 and 10.5 MHz resonant frequency for these devices, in correlation with ANSYS simulation predictions. Dynamic optical characterization seems to be a promising method to study nanoelectromechanical devices in the aim to enhance their performances.
Original language | English |
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Title of host publication | Procs 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF System |
Editors | W. J. Chappell |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 106-109 |
Number of pages | 4 |
ISBN (Electronic) | 978-1-4244-1856-5 |
ISBN (Print) | 978-1-4244-1855-8 |
DOIs | |
Publication status | Published - 2008 |
Event | 8th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2008) - Orlando Duration: 23 Jan 2008 → 25 Jan 2008 |
Conference
Conference | 8th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2008) |
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City | Orlando |
Period | 23/01/08 → 25/01/08 |
Keywords
- characterization
- heterodyne interferometry
- NEMS
- optical
- resonator