Faster and denser spin-tunneling random access memory (STram)

Zhi Gang Wang; Na Helian; Desmond J Mapps; Yoshihisa Nakamura; Warwick Clegg; David Wilton

doi:10.1109/20.617925

Faster and denser spin-tunneling random access memory (STram)

Zhi Gang Wang, Na Helian, Desmond J Mapps, Yoshihisa Nakamura, Warwick Clegg, David Wilton

Research output: Contribution to journal › Article › peer-review

Abstract

The spin tunneling junctions Co/Al/sub 2/O/sub 3//Ni/sub 80/Fe/sub 20/ provide an excellent means of storing a binary datum in the hard component (Co), and sensing its remanent state by switching the soft component (NiFe) in such a way that the magnetic state of the hard component remains unaltered. In this paper, it is clarified by a dynamic model that the switching is caused by the incoherent rotation of the magnetization in the fine thin film pattern and the read access time for a micro-structured spin tunneling with area of 0.256 /spl mu/m/spl times/0.256 /spl mu/m is 0.9 ns. In addition, a magnetic flux closure design was found to reduce the crosstalk by about a factor of five, compared with a conventional keeper-less design, which will be the most favored approach for achieving 10/sup 9/ bits/cm/sup 2/ areal density.

Original language	English
Pages (from-to)	3304-3306
Journal	IEEE Transactions on Magnetics
Volume	33
Issue number	5
DOIs	https://doi.org/10.1109/20.617925
Publication status	Published - Sept 1997

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title = "Faster and denser spin-tunneling random access memory (STram)",

abstract = "The spin tunneling junctions Co/Al/sub 2/O/sub 3//Ni/sub 80/Fe/sub 20/ provide an excellent means of storing a binary datum in the hard component (Co), and sensing its remanent state by switching the soft component (NiFe) in such a way that the magnetic state of the hard component remains unaltered. In this paper, it is clarified by a dynamic model that the switching is caused by the incoherent rotation of the magnetization in the fine thin film pattern and the read access time for a micro-structured spin tunneling with area of 0.256 /spl mu/m/spl times/0.256 /spl mu/m is 0.9 ns. In addition, a magnetic flux closure design was found to reduce the crosstalk by about a factor of five, compared with a conventional keeper-less design, which will be the most favored approach for achieving 10/sup 9/ bits/cm/sup 2/ areal density.",

author = "Wang, {Zhi Gang} and Na Helian and Mapps, {Desmond J} and Yoshihisa Nakamura and Warwick Clegg and David Wilton",

year = "1997",

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language = "English",

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pages = "3304--3306",

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T1 - Faster and denser spin-tunneling random access memory (STram)

AU - Wang, Zhi Gang

AU - Helian, Na

AU - Mapps, Desmond J

AU - Nakamura, Yoshihisa

AU - Clegg, Warwick

AU - Wilton, David

PY - 1997/9

Y1 - 1997/9

N2 - The spin tunneling junctions Co/Al/sub 2/O/sub 3//Ni/sub 80/Fe/sub 20/ provide an excellent means of storing a binary datum in the hard component (Co), and sensing its remanent state by switching the soft component (NiFe) in such a way that the magnetic state of the hard component remains unaltered. In this paper, it is clarified by a dynamic model that the switching is caused by the incoherent rotation of the magnetization in the fine thin film pattern and the read access time for a micro-structured spin tunneling with area of 0.256 /spl mu/m/spl times/0.256 /spl mu/m is 0.9 ns. In addition, a magnetic flux closure design was found to reduce the crosstalk by about a factor of five, compared with a conventional keeper-less design, which will be the most favored approach for achieving 10/sup 9/ bits/cm/sup 2/ areal density.

AB - The spin tunneling junctions Co/Al/sub 2/O/sub 3//Ni/sub 80/Fe/sub 20/ provide an excellent means of storing a binary datum in the hard component (Co), and sensing its remanent state by switching the soft component (NiFe) in such a way that the magnetic state of the hard component remains unaltered. In this paper, it is clarified by a dynamic model that the switching is caused by the incoherent rotation of the magnetization in the fine thin film pattern and the read access time for a micro-structured spin tunneling with area of 0.256 /spl mu/m/spl times/0.256 /spl mu/m is 0.9 ns. In addition, a magnetic flux closure design was found to reduce the crosstalk by about a factor of five, compared with a conventional keeper-less design, which will be the most favored approach for achieving 10/sup 9/ bits/cm/sup 2/ areal density.

UR - https://ieeexplore.ieee.org/abstract/document/617925

U2 - 10.1109/20.617925

DO - 10.1109/20.617925

M3 - Article

SN - 0018-9464

VL - 33

SP - 3304

EP - 3306

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 5

ER -

Faster and denser spin-tunneling random access memory (STram)

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