Feasibility of ultra-dense spin-tunneling random access memory

Zhi Gang Wang; Desmond J Mapps; Na Helian; Warwick Clegg; David Wilton; Paul Robinson; Yoshihisa Nakamura

doi:10.1109/20.649888

Feasibility of ultra-dense spin-tunneling random access memory

Zhi Gang Wang, Desmond J Mapps, Na Helian, Warwick Clegg, David Wilton, Paul Robinson, Yoshihisa Nakamura

Research output: Contribution to journal › Article › peer-review

Abstract

Three-dimensional (3-D) finite element models have been utilized to simulate electromagnetic behaviors in spin-tunneling random access memory (STram). The most significant contributors have been identified. Compared with conventional current-in-plane (CIP) giant magneto-resistive (GMR) memory, whose signal level is inversely proportional to the square root of the storage density, these current-perpendicular-to-plane (CPP) STram elements provide an excellent readout property in that their signal level is independent of their cross-section area. This result is so attractive that the density of STram should not be limited by signal degradation. Moreover, a magnetic flux closure design was found to reduce the crossfeed by about a factor of five, compared with conventional keeperless design, which is the most favored approach for achieving 10/sup 9/ bits/cm/sup 2/ areal density. Although the storage mechanism …

Original language	English
Pages (from-to)	4498-4512
Journal	IEEE Transactions on Magnetics
Volume	33
Issue number	6
DOIs	https://doi.org/10.1109/20.649888
Publication status	Published - Nov 1997

Access to Document

10.1109/20.649888

Cite this

@article{f95dfe5411e14eaf89824a7f93325937,

title = "Feasibility of ultra-dense spin-tunneling random access memory",

abstract = "Three-dimensional (3-D) finite element models have been utilized to simulate electromagnetic behaviors in spin-tunneling random access memory (STram). The most significant contributors have been identified. Compared with conventional current-in-plane (CIP) giant magneto-resistive (GMR) memory, whose signal level is inversely proportional to the square root of the storage density, these current-perpendicular-to-plane (CPP) STram elements provide an excellent readout property in that their signal level is independent of their cross-section area. This result is so attractive that the density of STram should not be limited by signal degradation. Moreover, a magnetic flux closure design was found to reduce the crossfeed by about a factor of five, compared with conventional keeperless design, which is the most favored approach for achieving 10/sup 9/ bits/cm/sup 2/ areal density. Although the storage mechanism …",

author = "Wang, {Zhi Gang} and Mapps, {Desmond J} and Na Helian and Warwick Clegg and David Wilton and Paul Robinson and Yoshihisa Nakamura",

year = "1997",

month = nov,

doi = "10.1109/20.649888",

language = "English",

volume = "33",

pages = "4498--4512",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "6",

}

TY - JOUR

T1 - Feasibility of ultra-dense spin-tunneling random access memory

AU - Wang, Zhi Gang

AU - Mapps, Desmond J

AU - Helian, Na

AU - Clegg, Warwick

AU - Wilton, David

AU - Robinson, Paul

AU - Nakamura, Yoshihisa

PY - 1997/11

Y1 - 1997/11

N2 - Three-dimensional (3-D) finite element models have been utilized to simulate electromagnetic behaviors in spin-tunneling random access memory (STram). The most significant contributors have been identified. Compared with conventional current-in-plane (CIP) giant magneto-resistive (GMR) memory, whose signal level is inversely proportional to the square root of the storage density, these current-perpendicular-to-plane (CPP) STram elements provide an excellent readout property in that their signal level is independent of their cross-section area. This result is so attractive that the density of STram should not be limited by signal degradation. Moreover, a magnetic flux closure design was found to reduce the crossfeed by about a factor of five, compared with conventional keeperless design, which is the most favored approach for achieving 10/sup 9/ bits/cm/sup 2/ areal density. Although the storage mechanism …

AB - Three-dimensional (3-D) finite element models have been utilized to simulate electromagnetic behaviors in spin-tunneling random access memory (STram). The most significant contributors have been identified. Compared with conventional current-in-plane (CIP) giant magneto-resistive (GMR) memory, whose signal level is inversely proportional to the square root of the storage density, these current-perpendicular-to-plane (CPP) STram elements provide an excellent readout property in that their signal level is independent of their cross-section area. This result is so attractive that the density of STram should not be limited by signal degradation. Moreover, a magnetic flux closure design was found to reduce the crossfeed by about a factor of five, compared with conventional keeperless design, which is the most favored approach for achieving 10/sup 9/ bits/cm/sup 2/ areal density. Although the storage mechanism …

UR - https://ieeexplore.ieee.org/abstract/document/649888

U2 - 10.1109/20.649888

DO - 10.1109/20.649888

M3 - Article

SN - 0018-9464

VL - 33

SP - 4498

EP - 4512

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 6

ER -

Feasibility of ultra-dense spin-tunneling random access memory

Abstract

Access to Document

Other files and links

Fingerprint

Cite this