Formation of silicon carbide whiskers and their microstructure

A. Chrysanthou, P. Grieveson, A. Jha

Research output: Contribution to journalArticlepeer-review

85 Citations (Scopus)


Thermodynamic and kinetic conditions for the formation of SiC whiskers are established. The mechanism of their nucleation and growth are studied and, on this basis, the magnitude of the thermally activated barrier is determined from the rate of reduction data. The microstructures of whiskers are analysed and the role of interfacial tension between the nuclei and impurities, and the metallic iron catalyst is studied in relation to the formation of SiC whiskers. A possible reason for polytypism in SiC whiskers is also proposed.
Original languageEnglish
Pages (from-to)3463-3476
Number of pages14
JournalJournal of Materials Science
Issue number13
Publication statusPublished - 1 Jan 1991


Dive into the research topics of 'Formation of silicon carbide whiskers and their microstructure'. Together they form a unique fingerprint.

Cite this