Fractional memristor

Frank Zhigang Wang; Luping Shi; Huaqiang Wu; Na Helian; Leon O Chua

doi:10.1063/1.5000919

Fractional memristor

Frank Zhigang Wang, Luping Shi, Huaqiang Wu, Na Helian, Leon O Chua

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

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Abstract

Based on the differential conformal transformation in the fractional order, we defined the fractional memristor in contrast to the traditional (integer-order) memristor. As an example, a typical spin-transfer torque (STT) memristor (with the asymmetric resistance hysteresis) was proved to be a 0.8 fractional memristor. In conclusion, many memristors should not be treated as ideal ones due to the fractional interaction between flux and charge. Indeed, unless a non-ideal memristor is properly modelled as a fractional memristor, no deep physical understanding would be possible to develop a reliable commercial product.

Original language	English
Article number	243502
Journal	Applied Physics Letters
Volume	111
Issue number	24
DOIs	https://doi.org/10.1063/1.5000919
Publication status	Published - 11 Dec 2017

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title = "Fractional memristor",

abstract = "Based on the differential conformal transformation in the fractional order, we defined the fractional memristor in contrast to the traditional (integer-order) memristor. As an example, a typical spin-transfer torque (STT) memristor (with the asymmetric resistance hysteresis) was proved to be a 0.8 fractional memristor. In conclusion, many memristors should not be treated as ideal ones due to the fractional interaction between flux and charge. Indeed, unless a non-ideal memristor is properly modelled as a fractional memristor, no deep physical understanding would be possible to develop a reliable commercial product.",

author = "Wang, {Frank Zhigang} and Luping Shi and Huaqiang Wu and Na Helian and Chua, {Leon O}",

note = "This article has been accepted for publication in Applied Physics Letters. Reproduced by permission from AIP Publishing. Content in the UH Research Archive is made available for personal research, educational, and non-commercial purposes only. Unless otherwise stated, all content is protected by copyright, and in the absence of an open license, permissions for further re-use should be sought from the publisher, the author, or other copyright holder. ",

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day = "11",

doi = "10.1063/1.5000919",

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T1 - Fractional memristor

AU - Wang, Frank Zhigang

AU - Shi, Luping

AU - Wu, Huaqiang

AU - Helian, Na

AU - Chua, Leon O

N1 - This article has been accepted for publication in Applied Physics Letters. Reproduced by permission from AIP Publishing. Content in the UH Research Archive is made available for personal research, educational, and non-commercial purposes only. Unless otherwise stated, all content is protected by copyright, and in the absence of an open license, permissions for further re-use should be sought from the publisher, the author, or other copyright holder.

PY - 2017/12/11

Y1 - 2017/12/11

N2 - Based on the differential conformal transformation in the fractional order, we defined the fractional memristor in contrast to the traditional (integer-order) memristor. As an example, a typical spin-transfer torque (STT) memristor (with the asymmetric resistance hysteresis) was proved to be a 0.8 fractional memristor. In conclusion, many memristors should not be treated as ideal ones due to the fractional interaction between flux and charge. Indeed, unless a non-ideal memristor is properly modelled as a fractional memristor, no deep physical understanding would be possible to develop a reliable commercial product.

AB - Based on the differential conformal transformation in the fractional order, we defined the fractional memristor in contrast to the traditional (integer-order) memristor. As an example, a typical spin-transfer torque (STT) memristor (with the asymmetric resistance hysteresis) was proved to be a 0.8 fractional memristor. In conclusion, many memristors should not be treated as ideal ones due to the fractional interaction between flux and charge. Indeed, unless a non-ideal memristor is properly modelled as a fractional memristor, no deep physical understanding would be possible to develop a reliable commercial product.

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DO - 10.1063/1.5000919

M3 - Article

SN - 0003-6951

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 243502

ER -

Fractional memristor

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