TY - JOUR
T1 - Gain saturation in Nd:doped laser materials
AU - Martin, William Eugene
AU - Milam, David
PY - 1982/7
Y1 - 1982/7
N2 - Saturation of gain in Nd:doped silicate, phosphate, and fluorophosphate glasses, and in doped crystals of YAG and YLF was observed during amplification of 1064 and 1053 nm pulses with durations of 1. 0, 9. 0, and 50 ns. Saturation fluences were computed from measured external parameters by means of the Frantz-Nodvik model for a homogeneous amplifier. The resulting values of saturation fluence increase with increasing output fluence and were only slightly greater at 50 ns than at 1 ns, suggesting that the lower level lifetime is less than 1 ns.
AB - Saturation of gain in Nd:doped silicate, phosphate, and fluorophosphate glasses, and in doped crystals of YAG and YLF was observed during amplification of 1064 and 1053 nm pulses with durations of 1. 0, 9. 0, and 50 ns. Saturation fluences were computed from measured external parameters by means of the Frantz-Nodvik model for a homogeneous amplifier. The resulting values of saturation fluence increase with increasing output fluence and were only slightly greater at 50 ns than at 1 ns, suggesting that the lower level lifetime is less than 1 ns.
UR - http://www.scopus.com/inward/record.url?scp=0020154269&partnerID=8YFLogxK
U2 - 10.1109/JQE.1982.1071668
DO - 10.1109/JQE.1982.1071668
M3 - Article
AN - SCOPUS:0020154269
SN - 0018-9197
VL - 18
SP - 1155
EP - 1163
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
IS - 7
ER -