In this paper, we address the issue of analyzing the effects of aging mechanisms on ICs' soft error (SE) susceptibility. In particular, we consider bias temperature instability (BTI), namely negative BTI in pMOS transistors and positive BTI in nMOS transistors that are recognized as the most critical aging mechanisms reducing the reliability of ICs. We show that BTI reduces significantly the critical charge of nodes of combinational circuits during their in-field operation, thus increasing the SE susceptibility of the whole IC. We then propose a time dependent model for SE susceptibility evaluation, enabling the use of adaptive SE hardening approaches, based on the ICs lifetime.
|Pages (from-to)||743 - 751|
|Number of pages||9|
|Journal||IEEE Transactions on Very Large Scale Integration (VLSI) Systems|
|Publication status||Published - 30 Apr 2015|
- bias temperature instability (BTI)
- critical charge
- soft error (SE)