Impact of Bias Temperature Instability on Soft Error Susceptibility

Daniele Rossi, Martin Omana, Cecilia Metra, Alessandro Paccagnella

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    27 Citations (Scopus)
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    Abstract

    In this paper, we address the issue of analyzing the effects of aging mechanisms on ICs' soft error (SE) susceptibility. In particular, we consider bias temperature instability (BTI), namely negative BTI in pMOS transistors and positive BTI in nMOS transistors that are recognized as the most critical aging mechanisms reducing the reliability of ICs. We show that BTI reduces significantly the critical charge of nodes of combinational circuits during their in-field operation, thus increasing the SE susceptibility of the whole IC. We then propose a time dependent model for SE susceptibility evaluation, enabling the use of adaptive SE hardening approaches, based on the ICs lifetime.
    Original languageEnglish
    Pages (from-to)743 - 751
    Number of pages9
    JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
    Volume23
    Issue number4
    DOIs
    Publication statusPublished - 30 Apr 2015

    Keywords

    • Aging
    • bias temperature instability (BTI)
    • critical charge
    • soft error (SE)

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