Low noise, low distortion, high frequency, fully differential CMOS transconductor

C. Hill; Y. Sun; S. Szczepanski

doi:10.1109/APCCAS.2000.913572

Low noise, low distortion, high frequency, fully differential CMOS transconductor

C. Hill
, Y. Sun
, S. Szczepanski

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Abstract

This paper describes a CMOS transconductance element based upon two differential pairs whose outputs are summed to give a linear transfer characteristic. The circuit has been simulated using a 2 μm process from MOSIS, and results show that with a single 5 V supply, bandwidth in excess of 300 MHz, THD below 0.7% for a 1 Vpk-pk differential input signal, and dynamic range in excess of 70 dB can be achieved.

Original language	English
Title of host publication	In: Procs of IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2000
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	600-603
ISBN (Print)	0-7803-6253-5
DOIs	https://doi.org/10.1109/APCCAS.2000.913572
Publication status	Published - 2000

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title = "Low noise, low distortion, high frequency, fully differential CMOS transconductor",

abstract = "This paper describes a CMOS transconductance element based upon two differential pairs whose outputs are summed to give a linear transfer characteristic. The circuit has been simulated using a 2 μm process from MOSIS, and results show that with a single 5 V supply, bandwidth in excess of 300 MHz, THD below 0.7\% for a 1 Vpk-pk differential input signal, and dynamic range in excess of 70 dB can be achieved.",

author = "C. Hill and Y. Sun and S. Szczepanski",

note = "“This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.{"} “Copyright IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.”",

year = "2000",

doi = "10.1109/APCCAS.2000.913572",

language = "English",

isbn = "0-7803-6253-5",

pages = "600--603",

booktitle = "In: Procs of IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2000",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

}

TY - GEN

T1 - Low noise, low distortion, high frequency, fully differential CMOS transconductor

AU - Hill, C.

AU - Sun, Y.

AU - Szczepanski, S.

N1 - “This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder." “Copyright IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.”

PY - 2000

Y1 - 2000

N2 - This paper describes a CMOS transconductance element based upon two differential pairs whose outputs are summed to give a linear transfer characteristic. The circuit has been simulated using a 2 μm process from MOSIS, and results show that with a single 5 V supply, bandwidth in excess of 300 MHz, THD below 0.7% for a 1 Vpk-pk differential input signal, and dynamic range in excess of 70 dB can be achieved.

AB - This paper describes a CMOS transconductance element based upon two differential pairs whose outputs are summed to give a linear transfer characteristic. The circuit has been simulated using a 2 μm process from MOSIS, and results show that with a single 5 V supply, bandwidth in excess of 300 MHz, THD below 0.7% for a 1 Vpk-pk differential input signal, and dynamic range in excess of 70 dB can be achieved.

U2 - 10.1109/APCCAS.2000.913572

DO - 10.1109/APCCAS.2000.913572

M3 - Conference contribution

SN - 0-7803-6253-5

SP - 600

EP - 603

BT - In: Procs of IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2000

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

Low noise, low distortion, high frequency, fully differential CMOS transconductor

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