Memristor-based random access memory: The delayed switching effect could revolutionize memory design

Frank Wang; Leon O.  Chua; Na Helian

doi:10.1109/NVMTS.2015.7457481

Memristor-based random access memory: The delayed switching effect could revolutionize memory design

Frank Wang, Leon O. Chua, Na Helian

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Abstract

Memristor’s on/off resistance can naturally store binary bits for non-volatile memories. In this work, we found that memristor’s another peculiar feature that the switching takes place with a time delay (we name it “the delayed switching”) can be used to selectively address any desired memory cell in a crossbar array. The analysis shows this is a must-be in a memristor with a piecewise-linear φ-q curve. A “circuit model”-based experiment has verified the delayed switching feature. It is demonstrated that memristors can be packed at least twice as densely as semiconductors, achieving a significant breakthrough in storage density.

Original language	English
Title of host publication	15th Non-Volatile Memory Technology Symposium (NVMTS), 2015
Place of Publication	Beijing, China
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Number of pages	8
ISBN (Electronic)	978-1-5090-2126-0
DOIs	https://doi.org/10.1109/NVMTS.2015.7457481
Publication status	Published - 25 Apr 2016
Event	Non-Volatile Memory Technology Symposium (NVMTS), 2015 15th - Beijing, China Duration: 12 Oct 2015 → 14 Oct 2015 http://ieeexplore.ieee.org/document/7457481/

Conference

Conference	Non-Volatile Memory Technology Symposium (NVMTS), 2015 15th
Abbreviated title	NVMTS 2015
Country/Territory	China
City	Beijing
Period	12/10/15 → 14/10/15
Internet address	http://ieeexplore.ieee.org/document/7457481/

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10.1109/NVMTS.2015.7457481

Memristor-based Random Access MemoryAccepted author manuscript, 533 KB

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title = "Memristor-based random access memory: The delayed switching effect could revolutionize memory design",

abstract = "Memristor{\textquoteright}s on/off resistance can naturally store binary bits for non-volatile memories. In this work, we found that memristor{\textquoteright}s another peculiar feature that the switching takes place with a time delay (we name it “the delayed switching”) can be used to selectively address any desired memory cell in a crossbar array. The analysis shows this is a must-be in a memristor with a piecewise-linear φ-q curve. A “circuit model”-based experiment has verified the delayed switching feature. It is demonstrated that memristors can be packed at least twice as densely as semiconductors, achieving a significant breakthrough in storage density.",

author = "Frank Wang and Chua, {Leon O.} and Na Helian",

note = "Frank Wang, Leon O. Chua, and Na Helian, 'Memristor-based random access memory: The delayed switching effect could revolutionize memory design' paper presented at the 15th Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China 12-14 October 2015; Non-Volatile Memory Technology Symposium (NVMTS), 2015 15th, NVMTS 2015 ; Conference date: 12-10-2015 Through 14-10-2015",

year = "2016",

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day = "25",

doi = "10.1109/NVMTS.2015.7457481",

language = "English",

booktitle = "15th Non-Volatile Memory Technology Symposium (NVMTS), 2015",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

url = "http://ieeexplore.ieee.org/document/7457481/",

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Wang, F, Chua, LO & Helian, N 2016, Memristor-based random access memory: The delayed switching effect could revolutionize memory design. in 15th Non-Volatile Memory Technology Symposium (NVMTS), 2015 . Institute of Electrical and Electronics Engineers (IEEE), Beijing, China, Non-Volatile Memory Technology Symposium (NVMTS), 2015 15th, Beijing, China, 12/10/15. https://doi.org/10.1109/NVMTS.2015.7457481

Memristor-based random access memory: The delayed switching effect could revolutionize memory design. / Wang, Frank; Chua, Leon O. ; Helian, Na.
15th Non-Volatile Memory Technology Symposium (NVMTS), 2015 . Beijing, China: Institute of Electrical and Electronics Engineers (IEEE), 2016.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Memristor-based random access memory: The delayed switching effect could revolutionize memory design

AU - Wang, Frank

AU - Chua, Leon O.

AU - Helian, Na

N1 - Frank Wang, Leon O. Chua, and Na Helian, 'Memristor-based random access memory: The delayed switching effect could revolutionize memory design' paper presented at the 15th Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China 12-14 October 2015

PY - 2016/4/25

Y1 - 2016/4/25

N2 - Memristor’s on/off resistance can naturally store binary bits for non-volatile memories. In this work, we found that memristor’s another peculiar feature that the switching takes place with a time delay (we name it “the delayed switching”) can be used to selectively address any desired memory cell in a crossbar array. The analysis shows this is a must-be in a memristor with a piecewise-linear φ-q curve. A “circuit model”-based experiment has verified the delayed switching feature. It is demonstrated that memristors can be packed at least twice as densely as semiconductors, achieving a significant breakthrough in storage density.

AB - Memristor’s on/off resistance can naturally store binary bits for non-volatile memories. In this work, we found that memristor’s another peculiar feature that the switching takes place with a time delay (we name it “the delayed switching”) can be used to selectively address any desired memory cell in a crossbar array. The analysis shows this is a must-be in a memristor with a piecewise-linear φ-q curve. A “circuit model”-based experiment has verified the delayed switching feature. It is demonstrated that memristors can be packed at least twice as densely as semiconductors, achieving a significant breakthrough in storage density.

UR - http://ieeexplore.ieee.org/document/7457481/

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DO - 10.1109/NVMTS.2015.7457481

M3 - Conference contribution

BT - 15th Non-Volatile Memory Technology Symposium (NVMTS), 2015

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Beijing, China

T2 - Non-Volatile Memory Technology Symposium (NVMTS), 2015 15th

Y2 - 12 October 2015 through 14 October 2015

ER -

Memristor-based random access memory: The delayed switching effect could revolutionize memory design

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