For the next generation applications in mobile communication, radar and satellite communication we need the devices that can operate at high frequencies and high power with minimum power consumption. There is a growing importance in the recent years for the development of GaN transistors. This paper presents design of the power efficient GaN based high power amplifier operating in the bandwidth of 5GHz–7GHz based on a 12 Watt Discrete Power GaN on SiC HEMT from TriQuint. In this manuscript the design of RF power amplifier, its stability, input and output matching impedance and performance for 5-7GHz is presented. Design and simulations of the power amplifier are carried out using Advanced Design System (ADS). Simulation results of device stability, gain and Power Added Efficiency (PAE) shows good accordance with the specifications and parameters of the device. In the design process, for better correlation in measurement and simulation results precision of passive element models are specially considered. In 1 dB compression point for the designed high power amplifier, the experiment and the simulation results show a Power Efficiency of 68%.
|Journal||Journal of Applied and Emerging Sciences|
|Publication status||Published - 18 Dec 2020|
- -High power amplifier
- power added efficiency
- GaN HEMT