TY - JOUR
T1 - Storage mechanism of spin-tunneling junctions
AU - Wang, Frank
AU - Helian, Na
AU - Mapps, Desmond J
AU - Clegg, Warwick
PY - 1999/6/1
Y1 - 1999/6/1
N2 - This paper concerns a microstructured spin-tunneling junction in which the minor loop's slope has a dependency on its past magnetic histories. The above storage mechanism inspired the authors to design and fabricate a new type of solid state spin-tunneling random access memory. This memory operates on the general principle of storing a binary datum in the `hard’ magnetic component and sensing its remanent state by switching the `soft’ magnetic component in such a way that the magnetic state of the `hard’ component remains unaltered.
AB - This paper concerns a microstructured spin-tunneling junction in which the minor loop's slope has a dependency on its past magnetic histories. The above storage mechanism inspired the authors to design and fabricate a new type of solid state spin-tunneling random access memory. This memory operates on the general principle of storing a binary datum in the `hard’ magnetic component and sensing its remanent state by switching the `soft’ magnetic component in such a way that the magnetic state of the `hard’ component remains unaltered.
UR - https://www.sciencedirect.com/science/article/pii/S0304885398012402
U2 - 10.1016/S0304-8853(98)01240-2
DO - 10.1016/S0304-8853(98)01240-2
M3 - Article
SN - 0304-8853
VL - 198
SP - 125
EP - 127
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
ER -