Storage mechanism of spin-tunneling junctions

Frank Wang, Na Helian, Desmond J Mapps, Warwick Clegg

Research output: Contribution to journalArticlepeer-review


This paper concerns a microstructured spin-tunneling junction in which the minor loop's slope has a dependency on its past magnetic histories. The above storage mechanism inspired the authors to design and fabricate a new type of solid state spin-tunneling random access memory. This memory operates on the general principle of storing a binary datum in the `hard’ magnetic component and sensing its remanent state by switching the `soft’ magnetic component in such a way that the magnetic state of the `hard’ component remains unaltered.
Original languageEnglish
Pages (from-to)125-127
JournalJournal of Magnetism and Magnetic Materials
Publication statusPublished - 1 Jun 1999


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