Storage mechanism of spin-tunneling junctions

This paper concerns a microstructured spin-tunneling junction in which the minor loop's slope has a dependency on its past magnetic histories. The above storage mechanism inspired the authors to design and fabricate a new type of solid state spin-tunneling random access memory. This memory operates on the general principle of storing a binary datum in the `hard’ magnetic component and sensing its remanent state by switching the `soft’ magnetic component in such a way that the magnetic state of the `hard’ component remains unaltered.