Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier

Xiaorun Zhou; Taiping Lu; Yadan Zhu; Guangzhou Zhao; Hailiang Dong; Zhigang Jia; Yongzhen Yang; Yong Chen; Bingshe Xu

doi:10.1186/s11671-017-2115-8

Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N₂/H₂-Grown GaN Barrier

Xiaorun Zhou, Taiping Lu, Yadan Zhu, Guangzhou Zhao, Hailiang Dong, Zhigang Jia, Yongzhen Yang, Yong Chen, Bingshe Xu

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Abstract

Surface morphology evolution mechanisms of InGaN/GaN multiple quantum wells (MQWs) during GaN barrier growth with different hydrogen (H₂) percentages have been systematically studied. Ga surface-diffusion rate, stress relaxation, and H₂ etching effect are found to be the main affecting factors of the surface evolution. As the percentage of H₂ increases from 0 to 6.25%, Ga surface-diffusion rate and the etch effect are gradually enhanced, which is beneficial to obtaining a smooth surface with low pits density. As the H₂ proportion further increases, stress relaxation and H₂ over- etching effect begin to be the dominant factors, which degrade surface quality. Furthermore, the effects of surface evolution on the interface and optical properties of InGaN/GaN MQWs are also profoundly discussed. The comprehensive study on the surface evolution mechanisms herein provides both technical and theoretical support for the fabrication of high-quality InGaN/GaN heterostructures.

Original language	English
Article number	354
Journal	Nanoscale Research Letters
Volume	12
DOIs	https://doi.org/10.1186/s11671-017-2115-8
Publication status	Published - 16 May 2017

Keywords

GaN barrier
Hydrogen
Interface
Surface

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10.1186/s11671-017-2115-8Licence: CC BY

Published VersionFinal published version, 1.71 MBLicence: CC BY

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title = "Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier",

abstract = "Surface morphology evolution mechanisms of InGaN/GaN multiple quantum wells (MQWs) during GaN barrier growth with different hydrogen (H2) percentages have been systematically studied. Ga surface-diffusion rate, stress relaxation, and H2 etching effect are found to be the main affecting factors of the surface evolution. As the percentage of H2 increases from 0 to 6.25%, Ga surface-diffusion rate and the etch effect are gradually enhanced, which is beneficial to obtaining a smooth surface with low pits density. As the H2 proportion further increases, stress relaxation and H2 over- etching effect begin to be the dominant factors, which degrade surface quality. Furthermore, the effects of surface evolution on the interface and optical properties of InGaN/GaN MQWs are also profoundly discussed. The comprehensive study on the surface evolution mechanisms herein provides both technical and theoretical support for the fabrication of high-quality InGaN/GaN heterostructures.",

keywords = "GaN barrier, Hydrogen, Interface, Surface",

author = "Xiaorun Zhou and Taiping Lu and Yadan Zhu and Guangzhou Zhao and Hailiang Dong and Zhigang Jia and Yongzhen Yang and Yong Chen and Bingshe Xu",

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doi = "10.1186/s11671-017-2115-8",

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T1 - Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier

AU - Zhou, Xiaorun

AU - Lu, Taiping

AU - Zhu, Yadan

AU - Zhao, Guangzhou

AU - Dong, Hailiang

AU - Jia, Zhigang

AU - Yang, Yongzhen

AU - Chen, Yong

AU - Xu, Bingshe

N1 - This is an Open Access article distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

PY - 2017/5/16

Y1 - 2017/5/16

N2 - Surface morphology evolution mechanisms of InGaN/GaN multiple quantum wells (MQWs) during GaN barrier growth with different hydrogen (H2) percentages have been systematically studied. Ga surface-diffusion rate, stress relaxation, and H2 etching effect are found to be the main affecting factors of the surface evolution. As the percentage of H2 increases from 0 to 6.25%, Ga surface-diffusion rate and the etch effect are gradually enhanced, which is beneficial to obtaining a smooth surface with low pits density. As the H2 proportion further increases, stress relaxation and H2 over- etching effect begin to be the dominant factors, which degrade surface quality. Furthermore, the effects of surface evolution on the interface and optical properties of InGaN/GaN MQWs are also profoundly discussed. The comprehensive study on the surface evolution mechanisms herein provides both technical and theoretical support for the fabrication of high-quality InGaN/GaN heterostructures.

AB - Surface morphology evolution mechanisms of InGaN/GaN multiple quantum wells (MQWs) during GaN barrier growth with different hydrogen (H2) percentages have been systematically studied. Ga surface-diffusion rate, stress relaxation, and H2 etching effect are found to be the main affecting factors of the surface evolution. As the percentage of H2 increases from 0 to 6.25%, Ga surface-diffusion rate and the etch effect are gradually enhanced, which is beneficial to obtaining a smooth surface with low pits density. As the H2 proportion further increases, stress relaxation and H2 over- etching effect begin to be the dominant factors, which degrade surface quality. Furthermore, the effects of surface evolution on the interface and optical properties of InGaN/GaN MQWs are also profoundly discussed. The comprehensive study on the surface evolution mechanisms herein provides both technical and theoretical support for the fabrication of high-quality InGaN/GaN heterostructures.

KW - GaN barrier

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KW - Interface

KW - Surface

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Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N₂/H₂-Grown GaN Barrier

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