University of Hertfordshire

By the same authors

Delayed switching in memristors and memristive systems

Research output: Contribution to journalArticlepeer-review

Documents

  • F. Wang
  • N. Helian
  • S. Wu
  • M-G. Lim
  • Y.K. Guo
  • M.A. Parker
View graph of relations
Original languageEnglish
Pages (from-to)755-757
JournalIEEE Electron Device Letters
Volume31
Issue7
DOIs
Publication statusPublished - 2010

Abstract

It was found that the switching in a memristor takes place with a time delay (this peculiar feature is named “the delayed switching”). This feature has been verified by a circuit-based experiment. The physical interpretation of this phenomenon is that an electron element possesses certain inertia, i.e., charge $q$ or flux $varphi$ is inertial with the tendency to remain unchanged (settle to some equilibrium state). It cannot respond as rapidly as the fast variation in the excitation waveform and always takes a finite but small time interval to change its resistance value, as it must take place in a memristor or memristive system. In addition, a potential application of using this feature in ultradense computer memory has been discussed.

ID: 98800