University of Hertfordshire

By the same authors

Design of Heterogeneous Memristor Based 1T2M Multi-value Memory Crossbar Array

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Original languageEnglish
Number of pages8
JournalJournal of Electronics & Information Technology
Volume43
Early online date19 Apr 2021
DOIs
Publication statusE-pub ahead of print - 19 Apr 2021

Abstract

As a new type of electronic component, memristor has the characteristics of small size, fast reading and writing speed, non-volatile and easy to be compatible with CMOS circuits. It is one of the most promising technologies to realize non-volatile memory. However, the existing multi-value storage cross array has problems such as complex circuit structure, sneak path problem and low storage density, which affect the practicability of the multi-value storage cross array. In this paper, a multi-value memory crossbar array based on heterogeneous memristors is proposed, in which the memory cell is composed of one Transistor and two heterogeneous Memristors (1T2M) with different threshold voltages and Ron resistance values. A single voltage signal completes the four-value read and write operation, which reduces the current path and simplifies the circuit structure. Simulation verification by PSpice shows that compared with existing work, the proposed 1T2M multi-value memory crossbar array has simpler circuit structure, higher storage density, faster reading and writing speed, and better overcomes the leakage current problem.

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