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Fractional memristor

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  • Frank Zhigang Wang
  • Luping Shi
  • Huaqiang Wu
  • Na Helian
  • Leon O Chua
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Original languageEnglish
Article number243502
JournalApplied Physics Letters
Volume111
Issue24
DOIs
Publication statusPublished - 11 Dec 2017

Abstract

Based on the differential conformal transformation in the fractional order, we defined the fractional memristor in contrast to the traditional (integer-order) memristor. As an example, a typical spin-transfer torque (STT) memristor (with the asymmetric resistance hysteresis) was proved to be a 0.8 fractional memristor. In conclusion, many memristors should not be treated as ideal ones due to the fractional interaction between flux and charge. Indeed, unless a non-ideal memristor is properly modelled as a fractional memristor, no deep physical understanding would be possible to develop a reliable commercial product.

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This article has been accepted for publication in Applied Physics Letters. Reproduced by permission from AIP Publishing. Content in the UH Research Archive is made available for personal research, educational, and non-commercial purposes only. Unless otherwise stated, all content is protected by copyright, and in the absence of an open license, permissions for further re-use should be sought from the publisher, the author, or other copyright holder.

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